24 DIP Module DS1220AB-100IND Memory Electronic Chips Component Original
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Attributes
NVSRAM (Non-Volatile SRAM)Technology
Non-VolatileMemory Type
2K x 8Memory Organization
Component & PartType
16KbitMemory Size
ChinaPlace of Origin
Packaging Type:Tube
Application:Memory
Features:Integrated Circuit Kit
Voltage - Supply:4.75V ~ 5.25V
Clock Frequency:-
Write Cycle Time - Word, Page:100ns
Memory Interface:Parallel
Key attributes
Technology
NVSRAM (Non-Volatile SRAM)
Memory Type
Non-Volatile
Memory Organization
2K x 8
Type
Component & Part
Memory Size
16Kbit
Place of Origin
China
Packaging Type
Tube
Application
Memory
Features
Integrated Circuit Kit
Voltage - Supply
4.75V ~ 5.25V
Clock Frequency
-
Write Cycle Time - Word, Page
100ns
Memory Interface
Parallel
Packaging and delivery
Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg
Lead time
Product descriptions from the supplier
Warning/Disclaimer
California Proposition 65 Consumer WarningView more
Easy Return
100 - 3,099 pieces
$0.60
>= 3,100 pieces
$0.30
Variations
Select nowSpecification
DS1220AB 100IND
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24 DIP Module DS1220AB-100IND Memory Electronic Chips Component Original












