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Authorized Distributor Transistors DFN8080-8 GAN080-650EBEZ Electronics Component

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£358
100-3,099 pieces
£180
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

GAN080-650EBEZ

Brand Name

Original

Description

650 V, 80 MOHM GALLIUM NITRIDE (

Place of Origin

China

Package / Case

DFN8080-8

Operating Temperature

-55°C ~ 150°C (TJ)

Shipping

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Item subtotal
£0.00
Shipping total
To be negotiated
Subtotal
£0.00

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Key attributes

FET Feature
-
Package / Case
DFN8080-8
Description
650 V, 80 MOHM GALLIUM NITRIDE (
Manufacturer Part Number
GAN080-650EBEZ
Brand Name
Original
Place of Origin
China
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Mfg Date Code
NEW
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Rds On (Max) @ Id, Vgs
80mOhm @ 8A, 6V
Vgs(th) (Max) @ Id
2.5V @ 30.7mA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)
6V
Vgs (Max)
+7V, -6V
Mounting Type
Surface Mount, Wettable Flank
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning