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Buy Electronics Components Online PowerPAK 1212-8SCD SISF02DN-T1-GE3 Transistors Manufacturer Channel

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£1.13
100-3,099 pieces
£0.5644
≥3,100 pieces

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Key attributes

Manufacturer Part Number

SISF02DN-T1-GE3

Brand Name

Original

Description

MOSFET 2N-CH 25V 30.5A/60A PPAK

Place of Origin

China

Package / Case

PowerPAK 1212-8SCD

Operating Temperature

-55°C ~ 150°C (TJ)

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Subtotal
£0.00

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Key attributes

Manufacturer Part Number
SISF02DN-T1-GE3
Brand Name
Original
Description
MOSFET 2N-CH 25V 30.5A/60A PPAK
Place of Origin
China
Package / Case
PowerPAK 1212-8SCD
Operating Temperature
-55°C ~ 150°C (TJ)
Series
TrenchFET Gen IV
Mfg Date Code
NEW
Power - Max
5.2W (Ta), 69.4W (Tc)
FET Feature
-
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
30.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs
3.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
2650pF @ 10V
Configuration
2 N-Channel (Dual) Common Drain
Mounting Type
Surface Mount
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Common Drain

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning