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UNITE CHANCE CO., LIMITED
HK1 yr
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Buy Online Electronic Components 8-DFN CGD65B200S2-T13 Transistors In Stock

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£3
100-3,099 pieces
£150
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

CGD65B200S2-T13

Brand Name

Original

Description

650V GAN HEMT, 200MOHM, DFN5X6.

Place of Origin

China

Package / Case

8-DFN (5x6)

Operating Temperature

-55°C ~ 150°C (TJ)

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Item subtotal
£0.00
Shipping total
To be negotiated
Subtotal
£0.00

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Key attributes

Manufacturer Part Number
CGD65B200S2-T13
Brand Name
Original
Description
650V GAN HEMT, 200MOHM, DFN5X6.
Place of Origin
China
Package / Case
8-DFN (5x6)
Operating Temperature
-55°C ~ 150°C (TJ)
Series
ICeGaN
Mfg Date Code
NEW
FET Type
-
FET Feature
Current Sensing
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
8.5A (Tc)
Rds On (Max) @ Id, Vgs
280mOhm @ 600mA, 12V
Vgs(th) (Max) @ Id
4.2V @ 2.75mA
Gate Charge (Qg) (Max) @ Vgs
1.4 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds
-
Drive Voltage (Max Rds On, Min Rds On)
9V, 20V
Vgs (Max)
+20V, -1V
Mounting Type
Surface Mount
Package
Cut Tape (CT)
FET Type
-
Technology
GaNFET (Gallium Nitride)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg

Lead time

Product descriptions from the supplier

Report abuse
Warning/Disclaimer
California Proposition 65 Consumer Warning

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