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Buy Online Electronic Components DFN8080-8 GAN140-650EBEZ Transistors Original

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£317
100-3,099 pieces
£159
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

GAN140-650EBEZ

Brand Name

Original

Description

650 V, 140 MOHM GALLIUM NITRIDE

Place of Origin

China

Package / Case

DFN8080-8

Operating Temperature

-55°C ~ 150°C (TJ)

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£0.00
Shipping total
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Subtotal
£0.00

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Key attributes

Manufacturer Part Number
GAN140-650EBEZ
Brand Name
Original
Description
650 V, 140 MOHM GALLIUM NITRIDE
Place of Origin
China
Package / Case
DFN8080-8
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Mfg Date Code
NEW
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Rds On (Max) @ Id, Vgs
140mOhm @ 5A, 6V
Vgs(th) (Max) @ Id
2.5V @ 17.2mA
Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds
125 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)
6V
Vgs (Max)
+7V, -1.4V
Mounting Type
Surface Mount, Wettable Flank
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning