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CGD65A130S2-T13 16-DFN Transistors Components Electronic Original One Stop Service

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£410
100-3,099 pieces
£205
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

CGD65A130S2-T13

Brand Name

Original

Description

650V GAN HEMT, 130MOHM, DFN8X8.

Place of Origin

China

Package / Case

16-DFN (8x8)

Operating Temperature

-55°C ~ 150°C (TJ)

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Item subtotal
£0.00
Shipping total
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Subtotal
£0.00

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Key attributes

Manufacturer Part Number
CGD65A130S2-T13
Brand Name
Original
Description
650V GAN HEMT, 130MOHM, DFN8X8.
Place of Origin
China
Package / Case
16-DFN (8x8)
Operating Temperature
-55°C ~ 150°C (TJ)
Series
ICeGaN
Mfg Date Code
NEW
FET Type
-
FET Feature
Current Sensing
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Rds On (Max) @ Id, Vgs
182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id
4.2V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs
2.3 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds
-
Drive Voltage (Max Rds On, Min Rds On)
12V
Vgs (Max)
+20V, -1V
Mounting Type
Surface Mount
Package
Cut Tape (CT)
FET Type
-
Technology
GaNFET (Gallium Nitride)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning