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Components Electronic GS65R038Q4 TO-247-4L Transistors Original

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$0.91
100-3,099 pieces
$0.46
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

GS65R038Q4

Brand Name

Original

Description

SiC MOSFET N-CH 650V 60A TO-247

Place of Origin

China

Package / Case

TO-247-4L

Operating Temperature

-55°C ~ 175°C (TJ)

Shipping

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$0.00
Shipping total
To be negotiated
Subtotal
$0.00

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Key attributes

Manufacturer Part Number
GS65R038Q4
Brand Name
Original
Description
SiC MOSFET N-CH 650V 60A TO-247
Place of Origin
China
Package / Case
TO-247-4L
Operating Temperature
-55°C ~ 175°C (TJ)
Series
-
Mfg Date Code
NEW
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Rds On (Max) @ Id, Vgs
49mOhm @ 30A, 18V
Vgs(th) (Max) @ Id
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
1480 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs (Max)
-10V, +20V
Mounting Type
Through Hole
Package
Tube
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning