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UNITE CHANCE CO., LIMITED
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Electronic Chips Component PowerPAK 1212-8SH SISS32LDN-T1-GE3 Transistors Original

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£0.7629
100-3,099 pieces
£0.3852
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

SISS32LDN-T1-GE3

Brand Name

Original

Description

MOSFET N-CH 80V 17.4A/63A PPAK

Place of Origin

China

Package / Case

PowerPAK 1212-8SH

Operating Temperature

-55°C ~ 150°C (TJ)

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Item subtotal
£0.00
Shipping total
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Subtotal
£0.00

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Key attributes

Manufacturer Part Number
SISS32LDN-T1-GE3
Brand Name
Original
Description
MOSFET N-CH 80V 17.4A/63A PPAK
Place of Origin
China
Package / Case
PowerPAK 1212-8SH
Operating Temperature
-55°C ~ 150°C (TJ)
Series
TrenchFET Gen IV
Mfg Date Code
NEW
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
17.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs
7.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2550 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Mounting Type
Surface Mount
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

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California Proposition 65 Consumer Warning