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Electronic Chips Component Transistors PG-HSOF-8-2 IMT65R026M2HXUMA1 Manufacturer Channel

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£619
100-3,099 pieces
£310
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

IMT65R026M2HXUMA1

Brand Name

Original

Description

SILICON CARBIDE MOSFET

Place of Origin

China

Package / Case

PG-HSOF-8-2

Operating Temperature

-55°C ~ 175°C (TJ)

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£0.00
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£0.00

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Key attributes

Manufacturer Part Number
IMT65R026M2HXUMA1
Brand Name
Original
Description
SILICON CARBIDE MOSFET
Place of Origin
China
Package / Case
PG-HSOF-8-2
Operating Temperature
-55°C ~ 175°C (TJ)
Series
CoolSiC
Mfg Date Code
NEW
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
81A (Tc)
Rds On (Max) @ Id, Vgs
24mOhm @ 34.5A, 20V
Vgs(th) (Max) @ Id
5.6V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
1499 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Vgs (Max)
+23V, -7V
Mounting Type
Surface Mount
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning