Electronics Component PG-TO247-4-U04 IMYH200R100M1HXKSA1 Transistors Manufacturer Channel
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Attributes
IMYH200R100M1HXKSA1Model Number
Through HoleMounting Type
ChinaPlace of Origin
OriginalBrand Name
FETs, MOSFETsFunctional Application
PG-TO247-4-U04Package / Case
Description:SIC DISCRETE
Package:Tube
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Key attributes
Model Number
IMYH200R100M1HXKSA1
Mounting Type
Through Hole
Place of Origin
China
Brand Name
Original
Functional Application
FETs, MOSFETs
Package / Case
PG-TO247-4-U04
Description
SIC DISCRETE
Package
Tube
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Packaging and delivery
Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg
Lead time
Product descriptions from the supplier
100 - 3099 pieces
£1265
>= 3100 pieces
£633
Variations
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