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≤1h
Response Time
≥100%
On-time delivery rate
33%
Reorder rate

Main markets: United States, South Korea, India, Argentina, Lebanon

Electronics Component Transistors Die EPC2021ENGR In Stock

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£294
100-3,099 pieces
£147
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

EPC2021ENGR

Brand Name

Original

Description

TRANS GAN 80V 60A BUMPED DIE

Place of Origin

China

Package / Case

Die

Operating Temperature

-40°C ~ 150°C (TJ)

Shipping

Shipping fee and delivery date to be negotiated. Chat with supplier now for more details.
Item subtotal
£0.00
Shipping total
To be negotiated
Subtotal
£0.00

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Key attributes

FET Feature
-
Package / Case
Die
Description
TRANS GAN 80V 60A BUMPED DIE
Manufacturer Part Number
EPC2021ENGR
Brand Name
Original
Place of Origin
China
Operating Temperature
-40°C ~ 150°C (TJ)
Series
eGaN
Mfg Date Code
NEW
FET Type
N-Channel
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
60A (Ta)
Rds On (Max) @ Id, Vgs
2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id
2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On)
5V
Vgs (Max)
+6V, -4V
Mounting Type
Surface Mount
Package
Cut Tape (CT)
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning