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IMW65R048M1HXKSA1 PG-TO247-3-41 Transistors Electronics Component Original

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5Chips Tech Limited
1 yr
HK

Attributes

IMW65R048M1HXKSA1Model Number
Through HoleMounting Type
ChinaPlace of Origin
OriginalBrand Name
FETs, MOSFETsFunctional Application
PG-TO247-3-41Package / Case
Description:MOSFET 650V NCH SIC TRENCH
Package:Tube
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)

Key attributes

Model Number
IMW65R048M1HXKSA1
Mounting Type
Through Hole
Place of Origin
China
Brand Name
Original
Functional Application
FETs, MOSFETs
Package / Case
PG-TO247-3-41
Description
MOSFET 650V NCH SIC TRENCH
Package
Tube
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg

Lead time

Product descriptions from the supplier

100 - 3099 pieces
$910
>= 3100 pieces
$455

Variations

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Shipping

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