Attributes
TPD4E05U06DQARModel Number
MOSFET Type
JekingBrand Name
Throught HolePackage Type
ThyristorsDescription
Guangdong, ChinaPlace of Origin
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:- 40 C~+ 125 C
Series:-
D/C:newest
Application:various
Supplier Type:Original Manufacturer, ODM, Agency
Cross Reference:-
Media Available:Datasheet, Photo
Current - Collector (Ic) (Max):-
Voltage - Collector Emitter Breakdown (max):-
Vce Saturation (Max) @ Ib, Ic:-
Current - Collector Cutoff (Max):-
DC Current Gain (hFE) (Min) @ Ic, Vce:-
Power - Max:-
Frequency - Transition:-
Mounting Type:Surface Mount
Resistor - Base (R1):-
Resistor - Emitter Base (R2):-
FET Type:N-Channel
FET Feature:Standard
Drain to Source Voltage (Vdss):200V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Rds On (Max) @ Id, Vgs:150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250uA
Gate Charge (Qg) (Max) @ Vgs:67nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1160pF @ 25V
Frequency:-
Current Rating (Amps):-
Noise Figure:-
Power - Output:-
Voltage - Rated:-
Drive Voltage (Max Rds On, Min Rds On):10V
Vgs (Max):±20V
IGBT Type:-
Configuration:Single
Vce(on) (Max) @ Vge, Ic:-
Input Capacitance (Cies) @ Vce:-
Input:-
NTC Thermistor:-
Voltage - Breakdown (V(BR)GSS):-
Current - Drain (Idss) @ Vds (Vgs=0):-
Current Drain (Id) - Max:-
Voltage - Cutoff (VGS off) @ Id:-
Resistance - RDS(On):-
Voltage - Output:-
Voltage - Offset (Vt):-
Current - Gate to Anode Leakage (Igao):-
Current - Valley (Iv):-
Current - Peak:-
Manufacturer Part Number::TPD4E05U06DQAR
Voltage - Reverse Standoff (Typ):5.5V (Max)
Voltage - Breakdown (Min):6V
Voltage - Clamping (Max) @ Ipp:14V
Current - Peak Pulse (10/1000us):2.5A (8/20us)
Power - Peak Pulse:40W
Power Line Protection:Yes
Applications:-
Mounting Type:Surface Mount
Base Product Number:TPD4E05U06
