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LYPM2337S1P JSRI IGBT Transistors Silicon Carbide Surface Mount Step-Down DC Power Switch Circuits New Original Electronic

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Attributes

IGBT TransistorType
Power Switch CircuitsApplication
Surface MountPackage Type
Surface MountMounting Type
Silicon Carbide (SiC)FET Feature
Full BridgeConfiguration
Manufacturer Part Number:LYPM2337S1P
Brand Name:JSRI
Description:P communicates MOS field effect transistors
Place of Origin:China
Package / Case:SOT23
Operating Temperature:-55°C ~ 150°C
Series:LYPM2337S1P
Mfg Date Code:0.76W
Supplier Type:Agency
Cross Reference:LYPM2337S1P
Media Available:Datasheet
Current - Collector (Ic) (Max):LYPM2337S1P
Voltage - Collector Emitter Breakdown (max):LYPM2337S1P
Vce Saturation (Max) @ Ib, Ic:LYPM2337S1P
Current - Collector Cutoff (Max):LYPM2337S1P
DC Current Gain (hFE) (Min) @ Ic, Vce:LYPM2337S1P
Power - Max:LYPM2337S1P
Frequency - Transition:LYPM2337S1P
Resistor - Base (R1):LYPM2337S1P
Resistor - Emitter Base (R2):LYPM2337S1P
FET Type:LYPM2337S1P
Drain to Source Voltage (Vdss):LYPM2337S1P
Current - Continuous Drain (Id) @ 25°C:LYPM2337S1P
Rds On (Max) @ Id, Vgs:LYPM2337S1P
Vgs(th) (Max) @ Id:LYPM2337S1P
Gate Charge (Qg) (Max) @ Vgs:LYPM2337S1P
Input Capacitance (Ciss) (Max) @ Vds:LYPM2337S1P
Frequency:LYPM2337S1P
Current Rating (Amps):LYPM2337S1P
Noise Figure:LYPM2337S1P
Power - Output:LYPM2337S1P
Voltage - Rated:LYPM2337S1P
Drive Voltage (Max Rds On, Min Rds On):LYPM2337S1P
Vgs (Max):LYPM2337S1P
IGBT Type:LYPM2337S1P
Vce(on) (Max) @ Vge, Ic:LYPM2337S1P
Input Capacitance (Cies) @ Vce:LYPM2337S1P
Input:LYPM2337S1P
NTC Thermistor:LYPM2337S1P
Voltage - Breakdown (V(BR)GSS):LYPM2337S1P
Current - Drain (Idss) @ Vds (Vgs=0):LYPM2337S1P
Current Drain (Id) - Max:LYPM2337S1P
Voltage - Cutoff (VGS off) @ Id:LYPM2337S1P
Resistance - RDS(On):LYPM2337S1P
Voltage - Output:LYPM2337S1P
Voltage - Offset (Vt):LYPM2337S1P
Current - Gate to Anode Leakage (Igao):LYPM2337S1P
Current - Valley (Iv):LYPM2337S1P
Current - Peak:LYPM2337S1P
Transistor Type:LYPM2337S1P
IC:LYPM2337S1P
Payment:Paypal\TT\Western Union\Trade Assurance
Product Name:Step-Down DC
Package:Original Packages
Part Number:ICchip
Condition:Original 100%
Quality:100% Original 100% Brand
Service:One Stop Bom Service
Shipping BY:DHL\UPS\Fedex\EMS\HK Post
Brand:Din-Tek Semiconductor
Operating Temperature:LYPM2337S1P
Description:LYPM2337S1P
Voltage:LYPM2337S1P
Applications:LYPM2337S1P

Key attributes

Type
IGBT Transistor
Application
Power Switch Circuits
Package Type
Surface Mount
Mounting Type
Surface Mount
FET Feature
Silicon Carbide (SiC)
Configuration
Full Bridge
Media Available
Datasheet
Supplier Type
Agency
Power - Max
LYPM2337S1P
Package / Case
SOT23
Description
P communicates MOS field effect transistors
Manufacturer Part Number
LYPM2337S1P
Brand Name
JSRI
Place of Origin
China
Operating Temperature
-55°C ~ 150°C
Series
LYPM2337S1P
Mfg Date Code
0.76W
Cross Reference
LYPM2337S1P
Current - Collector (Ic) (Max)
LYPM2337S1P
Voltage - Collector Emitter Breakdown (max)
LYPM2337S1P
Vce Saturation (Max) @ Ib, Ic
LYPM2337S1P
Current - Collector Cutoff (Max)
LYPM2337S1P
DC Current Gain (hFE) (Min) @ Ic, Vce
LYPM2337S1P
Frequency - Transition
LYPM2337S1P
Resistor - Base (R1)
LYPM2337S1P
Resistor - Emitter Base (R2)
LYPM2337S1P
FET Type
LYPM2337S1P
Drain to Source Voltage (Vdss)
LYPM2337S1P
Current - Continuous Drain (Id) @ 25°C
LYPM2337S1P
Rds On (Max) @ Id, Vgs
LYPM2337S1P
Vgs(th) (Max) @ Id
LYPM2337S1P
Gate Charge (Qg) (Max) @ Vgs
LYPM2337S1P
Input Capacitance (Ciss) (Max) @ Vds
LYPM2337S1P
Frequency
LYPM2337S1P
Current Rating (Amps)
LYPM2337S1P
Noise Figure
LYPM2337S1P
Power - Output
LYPM2337S1P
Voltage - Rated
LYPM2337S1P
Drive Voltage (Max Rds On, Min Rds On)
LYPM2337S1P
Vgs (Max)
LYPM2337S1P
IGBT Type
LYPM2337S1P
Vce(on) (Max) @ Vge, Ic
LYPM2337S1P
Input Capacitance (Cies) @ Vce
LYPM2337S1P
Input
LYPM2337S1P
NTC Thermistor
LYPM2337S1P
Voltage - Breakdown (V(BR)GSS)
LYPM2337S1P
Current - Drain (Idss) @ Vds (Vgs=0)
LYPM2337S1P
Current Drain (Id) - Max
LYPM2337S1P
Voltage - Cutoff (VGS off) @ Id
LYPM2337S1P
Resistance - RDS(On)
LYPM2337S1P
Voltage - Output
LYPM2337S1P
Voltage - Offset (Vt)
LYPM2337S1P
Current - Gate to Anode Leakage (Igao)
LYPM2337S1P
Current - Valley (Iv)
LYPM2337S1P
Current - Peak
LYPM2337S1P
Transistor Type
LYPM2337S1P
Mounting Type
Surface Mount
IC
LYPM2337S1P
Payment
Paypal\TT\Western Union\Trade Assurance
Product Name
Step-Down DC
Package
Original Packages
Part Number
ICchip
Condition
Original 100%
Quality
100% Original 100% Brand
Service
One Stop Bom Service
Shipping BY
DHL\UPS\Fedex\EMS\HK Post
Brand
Din-Tek Semiconductor
Operating Temperature
LYPM2337S1P
Description
LYPM2337S1P
Voltage
LYPM2337S1P
Applications
LYPM2337S1P
Type
transistors

Packaging and delivery

Selling Units
Single item
Single package size
100X100X100 cm
Single gross weight
0.030 kg

Lead time

Customization options

LOGO(+ from /Min. order: 2,000 pieces)
Pattem(+ from /Min. order: 2,000 pieces)
Packaging Carton(+ from /Min. order: 2,000 pieces)
View details

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning
This product has acquired the relevant product qualification(s)/license(s) of certain applicable country/countries.
iconFREE shipping capped at £20
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3-day dispatch
1 - 2,999 pieces
£489
≥ 3,000 pieces
£451

Variations

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Specification

LYPM2337S1P

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