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≤2h
Response Time
≥100%
On-time delivery rate
33%
Reorder rate

Main markets: United States, South Korea, India, Argentina, Lebanon

Transistors Die EPC2106ENGRT Electronics Component Authorized Distributor

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£0.5776
100-3,099 pieces
£0.2926
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

EPC2106ENGRT

Brand Name

Original

Description

MOSFET 2N-CH 100V 1.7A DIE

Place of Origin

China

Package / Case

Die

Operating Temperature

-40°C ~ 150°C (TJ)

Shipping

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Item subtotal
£0.00
Shipping total
To be negotiated
Subtotal
£0.00

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Key attributes

Manufacturer Part Number
EPC2106ENGRT
Brand Name
Original
Description
MOSFET 2N-CH 100V 1.7A DIE
Place of Origin
China
Package / Case
Die
Operating Temperature
-40°C ~ 150°C (TJ)
Series
eGaN
Mfg Date Code
NEW
Power - Max
-
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
1.7A
Rds On (Max) @ Id, Vgs
70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id
2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
75pF @ 50V
Configuration
2 N-Channel (Half Bridge)
Mounting Type
Surface Mount
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning