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≤1h
Response Time
≥100%
On-time delivery rate
33%
Reorder rate

Main markets: United States, South Korea, India, Argentina, Lebanon

Transistors EPC2100 Die Electronics Component In Stock

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£495
100-3,099 pieces
£248
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

EPC2100

Brand Name

Original

Description

MOSFET 2N-CH 30V 10A DIE

Place of Origin

China

Package / Case

Die

Operating Temperature

-40°C ~ 150°C (TJ)

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£0.00
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Subtotal
£0.00

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Key attributes

FET Feature
-
Configuration
2 N-Channel (Half Bridge)
Power - Max
-
Package / Case
Die
Description
MOSFET 2N-CH 30V 10A DIE
Manufacturer Part Number
EPC2100
Brand Name
Original
Place of Origin
China
Operating Temperature
-40°C ~ 150°C (TJ)
Series
eGaN
Mfg Date Code
NEW
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs
4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
475pF @ 15V, 1960pF @ 15V
Mounting Type
Surface Mount
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning