USD845 USD84 High-Speed Switching Diode | Fast-Recovery Semiconductor Diode USD845
Store rating:4.7
(62 reviews)20 sold
Attributes
USD845Model Number
High-Speed Switching DiodeType
OriginalBrand Name
Throught HolePackage Type
Fast-Recovery Semiconductor DiodeDescription
OriginalPlace of Origin
Package / Case:Standard
Operating Temperature:/
Series:USD845
D/C:/
Application:/
Supplier Type:/
Media Available:/
Current - Collector (Ic) (Max):/
Voltage - Collector Emitter Breakdown (max):/
Vce Saturation (Max) @ Ib, Ic:/
Current - Collector Cutoff (Max):/
DC Current Gain (hFE) (Min) @ Ic, Vce:/
Power - Max:/
Frequency - Transition:/
Mounting Type:Through Hole
Resistor - Base (R1):/
Resistor - Emitter Base (R2):/
FET Type:/
FET Feature:/
Drain to Source Voltage (Vdss):/
Current - Continuous Drain (Id) @ 25°C:/
Rds On (Max) @ Id, Vgs:/
Vgs(th) (Max) @ Id:/
Gate Charge (Qg) (Max) @ Vgs:/
Input Capacitance (Ciss) (Max) @ Vds:/
Frequency:/
Current Rating (Amps):/
Noise Figure:/
Power - Output:/
Voltage - Rated:/
Drive Voltage (Max Rds On, Min Rds On):/
Vgs (Max):/
IGBT Type:/
Configuration:/
Vce(on) (Max) @ Vge, Ic:/
Input Capacitance (Cies) @ Vce:/
Input:/
NTC Thermistor:/
Voltage - Breakdown (V(BR)GSS):/
Current - Drain (Idss) @ Vds (Vgs=0):/
Current Drain (Id) - Max:/
Voltage - Cutoff (VGS off) @ Id:/
Resistance - RDS(On):/
Voltage - Output:/
Voltage - Offset (Vt):/
Current - Gate to Anode Leakage (Igao):/
Current - Valley (Iv):/
Current - Peak:/
Transistor Type:High-Speed Switching Diode
Mounting Type:Through Hole
Key attributes
Model Number
USD845
Type
High-Speed Switching Diode
Brand Name
Original
Package Type
Throught Hole
Description
Fast-Recovery Semiconductor Diode
Place of Origin
Original
Package / Case
Standard
Operating Temperature
/
Series
USD845
D/C
/
Application
/
Supplier Type
/
Media Available
/
Current - Collector (Ic) (Max)
/
Voltage - Collector Emitter Breakdown (max)
/
Vce Saturation (Max) @ Ib, Ic
/
Current - Collector Cutoff (Max)
/
DC Current Gain (hFE) (Min) @ Ic, Vce
/
Power - Max
/
Frequency - Transition
/
Mounting Type
Through Hole
Resistor - Base (R1)
/
Resistor - Emitter Base (R2)
/
FET Type
/
FET Feature
/
Drain to Source Voltage (Vdss)
/
Current - Continuous Drain (Id) @ 25°C
/
Rds On (Max) @ Id, Vgs
/
Vgs(th) (Max) @ Id
/
Gate Charge (Qg) (Max) @ Vgs
/
Input Capacitance (Ciss) (Max) @ Vds
/
Frequency
/
Current Rating (Amps)
/
Noise Figure
/
Power - Output
/
Voltage - Rated
/
Drive Voltage (Max Rds On, Min Rds On)
/
Vgs (Max)
/
IGBT Type
/
Configuration
/
Vce(on) (Max) @ Vge, Ic
/
Input Capacitance (Cies) @ Vce
/
Input
/
NTC Thermistor
/
Voltage - Breakdown (V(BR)GSS)
/
Current - Drain (Idss) @ Vds (Vgs=0)
/
Current Drain (Id) - Max
/
Voltage - Cutoff (VGS off) @ Id
/
Resistance - RDS(On)
/
Voltage - Output
/
Voltage - Offset (Vt)
/
Current - Gate to Anode Leakage (Igao)
/
Current - Valley (Iv)
/
Current - Peak
/
Transistor Type
High-Speed Switching Diode
Mounting Type
Through Hole
Packaging and delivery
Selling Units
Single item
Lead time
Product descriptions from the supplier
Warning/Disclaimer
California Proposition 65 Consumer WarningView more
Minimum order quantity: 1 piece
$210-840
Variations
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